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TSL267 HIGH SENSITIVITY IR LIGHT TO VOLTAGE CONVERTER
TAOS033 - OCTOBER 2001
D Integral Visible Light Cutoff Filter D Converts IR Light Intensity to Output D D D
Voltage Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components High Sensitivity Single Voltage Supply Operation (2.7 V to 5.5 V)
PACKAGE (FRONT VIEW)
1
2
3
D Low Noise (200 Vrms Typ to 1 kHz) D Rail-to-Rail Output D High Power-Supply Rejection (35 dB at
1 kHz)
D Compact 3-Leaded Plastic Package
GND VDD
OUT
Description
The TSL267 is a high-sensitivity low-noise infrared light-to-voltage optical converter that combines a photodiode and a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional to IR light intensity (irradiance) on the photodiode. The TSL267 has a transimpedance gain of 320 M. The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead visible-light-blocking plastic sidelooker package with an integral lens.
Functional Block Diagram
- +
Voltage Output
Terminal Functions
TERMINAL NAME GND OUT VDD NO. 1 3 2 Output voltage Supply voltage DESCRIPTION Ground (substrate). All voltages are referenced to GND.
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Texas Advanced Optoelectronic Solutions Inc.
800 Jupiter Road, Suite 205 S Plano, TX 75074 S (972) 673-0759
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TSL267 HIGH SENSITIVITY IR LIGHT TO VOLTAGE CONVERTER
TAOS033 - OCTOBER 2001
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Duration of short-circuit current at (or below) 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25C to 85C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25C to 85C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
MIN Supply voltage, VDD Operating free-air temperature, TA 2.7 0 MAX 5.5 70 UNIT V C
Electrical Characteristics at VDD = 5 V, TA = 25C, p = 940 nm, RL = 10 k (unless otherwise noted) (see Notes 2, 3, and 4)
PARAMETER VD VOM VO VD Ne PSRR IDD Dark voltage Maximum output voltage swing Output voltage Temperature coefficient of dark voltage (VD) Irradiance responsivity Power supply rejection ratio yj Supply current Ee = 0 VDD = 4.5 V, VDD = 4.5 V, Ee = 4.4 W/cm2 TA = 0C to 70C See Note 5 fac = 100 Hz, see Note 6 fac = 1 kHz, see Note 6 Ee = 4.4 W/cm2 NOTES: 2. 3. 4. 5. No Load RL = 10 k 4 1.2 TEST CONDITIONS MIN 0 4.49 4.2 2 -15 0.45 55 35 1.9 4 2.8 V V V/C V/(W/cm2) dB dB mA TYP MAX 15 UNIT mV
Measured with RL = 10 k between output and ground. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source. The input irradiance is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength p = 940 nm. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0. 6. Power supply rejection ratio PSRR is defined as 20 log (VDD(f)/VO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V.
Copyright E 2001, TAOS Inc.
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TSL267 HIGH SENSITIVITY IR LIGHT TO VOLTAGE CONVERTER
TAOS033 - OCTOBER 2001
Switching Characteristics at VDD = 5 V, TA = 25C, p = 940 nm, RL = 10 k (unless otherwise noted)
PARAMETER tr tf ts Output pulse rise time, 10% to 90% of final value Output pulse fall time, 10% to 90% of final value Output settling time to 1% of final value Integrated noise voltage TEST CONDITIONS See Note 7 and Figure 1 See Note 7 and Figure 1 See Note 7 and Figure 1 f = dc to 1 kHz f = 10 Hz Vn Output noise voltage, rms g, f = 100 Hz f = 1 kHz NOTE 7: Switching characteristics apply over the range VO = 0.1 V to 4.5 V. Ee = 0 Ee = 0 Ee = 0 Ee = 0 MIN TYP 160 150 330 200 6 6 7 V/Hz rms MAX 250 250 UNIT s s s Vrms
PARAMETER MEASUREMENT INFORMATION
VDD Pulse Generator LED (see Note A) TSL267 1 TEST CIRCUIT - + RL Output (see Note B) 10% 90% 90% 10% 2 Ee Input 3 Output tr tf
VOLTAGE WAVEFORM
NOTES: A. The input irradiance is supplied by a pulsed GaAs light-emitting diode with peak wavelength: p = 940 nm, tr < 1 s, tf < 1 s. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi 1 M, Ci 20 pF.
Figure 1. Switching Times
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TSL267 HIGH SENSITIVITY IR LIGHT TO VOLTAGE CONVERTER
TAOS033 - OCTOBER 2001
TYPICAL CHARACTERISTICS
POWER SUPPLY REJECTION RATIO vs FREQUENCY
80 Power Supply Rejection Ratio -- dB 70 60 50 40 30 20 10 0 800 900 1000 - Wavelength - nm 1100 10 102 103 104 f - Frequency - Hz 105 106
PHOTODIODE SPECTRAL RESPONSIVITY
1.6 TA = 25C 1.4 1.2 Relative Responsivity 1.0 0.8 0.6 0.4 0.2 0 700 Normalized to 940 nm
Figure 2
Figure 3
DARK VOLTAGE vs FREE-AIR TEMPERATURE
10 9 8 V D- Dark Voltage - mV 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 TA - Free-Air Temperature - C 70 Normalized Response VDD = 5 V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -90 -70
NORMALIZED RESPONSE vs ANGULAR DISPLACEMENT
-50
-30 -10 10 30 50 Angular Displacement - 5
70
90
Figure 4
Figure 5
Copyright E 2001, TAOS Inc.
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TSL267 HIGH SENSITIVITY IR LIGHT TO VOLTAGE CONVERTER
TAOS033 - OCTOBER 2001
MECHANICAL DATA
The TSL267 is implemented in a visible-light-blocking 3-leaded package with a molded focusing lens.
0.072 (1,84) 0.057 (1,44) 0.032 (0,80) 0.016 (0,40) R 0.035 (0,90) 0.071 (1,8) 0.110 (2,80) 0.189 (4,80) 0.173 (4,40)
0.189 (4,80) 0.173 (4,40) 0.165 (4,20) 0.150 (3,80) 0.071 (1,80)
0.016 (0,40)
0.079 (2,00) 0.039 (1,00)
0.029 (0,75) 0.102 (2,6)
0.027 (0,70)
0.026 (0,65) 0.630 (16,00) 0.531 (13,50)
0.018 (0,45)
0.079 (2,00) 0.079 (2,00)
0.018 (0,45)
Figure 6. Package Configuration
NOTES: A. All linear dimensions are in inches (millimeters). B. This drawing is subject to change without notice. C. All dimensions apply before solder dip.
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TSL267 HIGH SENSITIVITY IR LIGHT TO VOLTAGE CONVERTER
TAOS033 - OCTOBER 2001
PRODUCTION DATA -- information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER'S RISK.
TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are trademarks of Texas Advanced Optoelectronic Solutions Incorporated.
Copyright E 2001, TAOS Inc.
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